JPS54100253A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54100253A JPS54100253A JP610878A JP610878A JPS54100253A JP S54100253 A JPS54100253 A JP S54100253A JP 610878 A JP610878 A JP 610878A JP 610878 A JP610878 A JP 610878A JP S54100253 A JPS54100253 A JP S54100253A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal
- ion
- poly
- injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 abstract 8
- 238000002347 injection Methods 0.000 abstract 4
- 239000007924 injection Substances 0.000 abstract 4
- 230000007547 defect Effects 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000001133 acceleration Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 238000000197 pyrolysis Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP610878A JPS54100253A (en) | 1978-01-25 | 1978-01-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP610878A JPS54100253A (en) | 1978-01-25 | 1978-01-25 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54100253A true JPS54100253A (en) | 1979-08-07 |
| JPS6152972B2 JPS6152972B2 (en]) | 1986-11-15 |
Family
ID=11629294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP610878A Granted JPS54100253A (en) | 1978-01-25 | 1978-01-25 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54100253A (en]) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6484719A (en) * | 1987-09-28 | 1989-03-30 | Matsushita Electronics Corp | Manufacture of semiconductor device |
| US4863229A (en) * | 1982-02-17 | 1989-09-05 | Sharp Kabushiki Kaisha | Optical information transmitting device |
-
1978
- 1978-01-25 JP JP610878A patent/JPS54100253A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4863229A (en) * | 1982-02-17 | 1989-09-05 | Sharp Kabushiki Kaisha | Optical information transmitting device |
| JPS6484719A (en) * | 1987-09-28 | 1989-03-30 | Matsushita Electronics Corp | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6152972B2 (en]) | 1986-11-15 |
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